多电平变流器多载波PWM技术的研究

为了对多载波脉宽调制(PWM)技术的谐波特性进行定量的数学分析,通过双重傅立叶变换得到分别采用三种多载波PWM方案的多电平变流器输出电压的傅立叶级数.从谐波品质角度比较了各种方案的优劣,确定了在不同场合下多电平变流器最佳的调制方案.第三种方案的低次谐波含量最低,最适合于单相多电平变流器.在三相平衡无中线系统中,由于载波谐波不产生电流,第三种方案的总谐波失真度最低,因而最为合适.理论分析的结果得到了仿真实验的验证.     

Preconditioning for a Class of Spectral Differentiation Matrices

We propose an efficient preconditioning technique for the numerical solution of first-order partial differential equations (PDEs). This study has been motivated by the computation of an invariant torus of a system of ordinary differential equations. We find the torus by discretizing a nonlinear first-order PDE with a full two-dimensional Fourier spectral method and by applying Newton’s method. This leads to large nonsymmetric linear algebraic systems. The sparsity pattern of these systems makes the use of direct solvers prohibitively expensive. Commonly used iterative methods, e.g., GMRes, BiCGStab and CGNR (Conjugate Gradient applied to the normal equations), are quite slow to converge. Our preconditioner is derived from the solution of a PDE with constant coefficients; it has a fast implementation based on the Fast Fourier Transform (FFT). It effectively increases the clustering of the spectrum, and speeds up convergence significantly. We demonstrate the performance of the preconditioner in a number of linear PDEs and the nonlinear PDE arising from the Van der Pol oscillator     

便携式X射线荧光光谱仪检测贫铀棒材表面镍锌镀层厚度

为了确保贫铀棒材表面防腐性能满足使用要求,需要准确地测量产品表面的镍镀层和锌镀层厚度。采用便携式X射线荧光光谱仪(PXRF)对贫铀棒材表面双镀层的各层厚度进行检测,实现了对镍镀层和锌镀层厚度非破坏性的测量。选用特征谱线强度分布均匀的镀层样品和未镀镀层的贫铀基体样品,采用PXRF检测,结果表明,基体射线对检测谱线无干扰。分别选取相同厚度镍镀层、不同厚度锌镀层的样品,相同厚度锌镀层、不同厚度镍镀层的样品,以及镍镀层、锌镀层厚度均不相同的样品,采用PXRF进行检测,结果表明,实验方法可识别相同基体上不同厚度的镍镀层和锌镀层,可实现镍锌组合镀层中两种镀层厚度的同时测量。根据贫铀棒材样品结构特点和镍镀层和锌镀层厚度的技术要求,设计制作了对比试样,分别绘制贫铀棒材样品镍镀层和锌镀层厚度与其对应特征峰强度的校准曲线,结果表明,校准曲线线性相关系数r均不小于0.999 4。采用实验方法检测贫铀棒材样品表面镍镀层和锌镀层厚度,同时在任意圆周上均匀地取6个检测点,采用金相显微镜法进行检测求得平均值,结果表明,实验方法测定结果相对标准偏差(n=6)不大于5.1%;与金相显微镜法基本一致,两种方法差值为-1.57~1.70 μm。     

Cyclic codes over R = Fp + uFp +?+ uFp with length pn

In this paper, all cyclic codes with length p^sn, (n prime to p) over the ring R = F_p + uF_p +?+ u^k−1F_p are classified. It is first proved that Tor_j(C) is an ideal of , so that the structure of ideals over extension ring S_u^k(m,ω)=GR(u^k,m)[ω]/〈ω^ps-1〉 is determined. Then, an isomorphism between R[X]/〈X^N − 1〉 and a direct sum ⊕_h∈IS_u^k(m_h,ω) can be obtained using discrete Fourier transform. The generator polynomial representation of the corresponding ideals over F_p + uF_p +?+ u^k−1F_p is calculated via the inverse isomorphism. Moreover, torsion codes, MS polynomial and inversion formula are described.     

The fractional Fourier transform and quadratic field magnetic resonance imaging

The fractional Fourier transform (FrFT) is revisited in the framework of strongly continuous periodic semigroups to restate known results and to explore new properties of the FrFT. We then show how the FrFT can be used to reconstruct Magnetic Resonance (MR) images acquired under the presence of quadratic field inhomogeneity. Particularly, we prove that the order of the FrFT is a measure of the distortion in the reconstructed signal. Moreover, we give a dynamic interpretation to the order as time evolution of a function. We also introduce the notion of ρ-α space as an extension of the Fourier or k-space in MR, and we use it to study the distortions introduced in two common MR acquisition strategies. We formulate the reconstruction problem in the context of the FrFT and show how the semigroup theory allows us to find new reconstruction formulas for discrete sampled signals. Finally, the results are supplemented with numerical examples that show how it performs in a standard 1D MR signal reconstruction.     

Role of argon in hot wire chemical vapor deposition of hydrogenated nanocrystalline silicon thin films

Structural, optical and electrical properties of hydrogenated nanocrystalline silicon (nc-Si:H) films, deposited from silane (SiH₄) and argon (Ar) gas mixture without hydrogen by hot wire chemical vapor deposition (HW-CVD) method were investigated. Film properties are carefully and systematically studied as a function of argon dilution of silane (R_Ar). We observed that the deposition rate is much higher (4-23 Å/s) compared to conventional plasma enhanced chemical vapor deposited nc-Si:H films using Ar dilution of silane (0.5-0.83 Å/s). Characterization of these films with Raman spectroscopy revealed that Ar dilution of silane in HW-CVD endorses the growth of crystallinity and structural order in the nc-Si:H films. The Fourier transform infrared spectroscopic analysis showed that with increasing Ar dilution, the hydrogen bonding in the films shifts from di-hydrogen (Si-H₂) and (Si-H₂)_n complexes to mono-hydrogen (Si-H) bounded species. The hydrogen content in the films increases with increasing Ar dilution and was found to be < 4 at.% over the entire range of Ar dilutions of silane studied. However, the band gap shows decreasing trend with increase in Ar dilution of silane and it has been attributed to the decrease in the percentage of the amorphous phase in the film. The microstructure parameter was found to be > 0.4 for the films deposited at low Ar dilution of silane and ~ 0.1 or even less for the films deposited at higher Ar dilution, suggesting that there is an enhancement of structural order and homogeneity in the film. From the present study it has been concluded that the Ar dilution of silane is a key process parameter to induce the crystallinity and to improve the structural ordering in the nc-Si:H films deposited by the HW-CVD method.     

The effect of the terminating bonds on the electronic properties of sputtered carbon nitride thin films

Amorphous carbon nitride films (a-CN_x) were grown by reactive radio-frequency magnetron sputtering of a graphite target in an argon/nitrogen gas mixture. The total discharge pressure was 1 Pa and the total nitrogen partial pressure (NPP) in plasma was varied between 0 and 100%. The correlation between the microstructure changes, the optoelectronic properties and the internal stress has been investigated in order to prevent the limiting role of the terminating bonds on the electronic properties of the a-CN_x films, and to determine the range of the nitrogen content improving these properties. The analysis of the results reveals that below 3%, the nitrogen incorporation induces an increase in the density of π-bonds, which promotes the enhancement of the conductivity and the reduction of the optical gap. With increasing NPP ratio up to 6%, the formation of terminating bonds within the network reduces the connectivity of the graphitic network, decreasing the conductivity. For higher N content, the reaction of the bonds terminating with water can increase the compressive stress, leading to spontaneous delamination of films.     

单球多位置灵敏计数器的中子能量响应合理性初步探索

设计了一种单球3个位置灵敏计数器不同分区方法,借用蒙特卡罗模拟对5个计数区的中子能量响应进行了计算,并分析5个计数区的能量响应合理性.基于能量响应假设实验,利用少道解谱UMG软件包对诸如注量和周围剂量当量的剂量学量进行计算,并对计算的结果进行了讨论.设计了一种单球3个位置灵敏计数器不同分区方法,借用蒙特卡罗模拟对5个计数区的中子能量响应进行了计算,并分析5个计数区的能量响应合理性.基于能量响应假设实验,利用少道解谱UMG软件包对诸如注量和周围剂量当量的剂量学量进行计算,并对计算的结果进行了讨论.     

Asymptotic Fourier Coefficients for a C∞ Bell (Smoothed-“Top-Hat”) & the Fourier Extension Problem

In constructing local Fourier bases and in solving differential equations with nonperiodic solutions through Fourier spectral algorithms, it is necessary to solve the Fourier Extension Problem. This is the task of extending a nonperiodic function, defined on an interval , to a function which is periodic on the larger interval . We derive the asymptotic Fourier coefficients for an infinitely differentiable function which is one on an interval , identically zero for , and varies smoothly in between. Such smoothed “top-hat” functions are “bells” in wavelet theory. Our bell is (for x ≥ 0) where where . By applying steepest descents to approximate the coefficient integrals in the limit of large degree j, we show that when the width L is fixed, the Fourier cosine coefficients a _j of on are proportional to where Λ(j) is an oscillatory factor of degree given in the text. We also show that to minimize error in a Fourier series truncated after the Nth term, the width should be chosen to increase with N as . We derive similar asymptotics for the function f(x)=x as extended by a more sophisticated scheme with overlapping bells; this gives an even faster rate of Fourier convergence